Release Etch for MEMS

Jun 14, 2021

Talking Poster (with captions) – Introduction to vapor release etching using either vapor HF to etch sacrificial silicon oxide, or XeF2 to etch sacrificial silicon. Both are selective processes which allow MEMS release with long undercuts through narrow channels, without the corrosion and stiction often associated with wet etching.

Are you sure?

You've selected to view this site translated by Google Translate.
51ÁÔÆæ China has the same content with improved translations.

Would you like to visit 51ÁÔÆæ China instead?


ÄúÒÑÑ¡Ôñ²é¿´ÓɳҴǴDzµ±ô±ð·­Òë·­ÒëµÄ´ËÍøÕ¾¡£
°­³¢´¡ÖйúµÄÄÚÈÝÓëÓ¢ÎÄÍøÕ¾Ïàͬ²¢¸Ä½øÁË·­Òë¡£

ÄãÏë·ÃÎÊ°­³¢´¡ÖйúÂð£¿

If you are a current 51ÁÔÆæ Employee, please apply through the 51ÁÔÆæ Intranet on My Access.

Exit